FABRICATION METHOD OF NANOPORE, FABRICATION APPARATUS OF NANOPORE, AND ANALYZER USING NANOPORE

PROBLEM TO BE SOLVED: To solve such a problem that, in the technique to form a nanopore by backfilling a pore after formation thereof, molecular designing of a process gas and condition setting of a process in accordance with the target nanopore diameter are actually difficult, because when a film i...

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Hauptverfasser: ANAZAWA TAKASHI, YANAGI ITARU, AKABORI REINA, OURA TAKESHI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To solve such a problem that, in the technique to form a nanopore by backfilling a pore after formation thereof, molecular designing of a process gas and condition setting of a process in accordance with the target nanopore diameter are actually difficult, because when a film is deposited by ALD, the nanopore is formed with working likelihood of a single atom level, however, a nanopore formed with a process gas molecule generally used in ALD has an order of sub-nanometer.SOLUTION: A second nanopore is formed by burying a first nanopore having a first pore diameter with atomic layer deposition, a second pore diameter of the second nanopore is measured, and a third nanopore having a third pore diameter is fabricated by adjusting atomic layers of the inner wall of the second nanopore one layer by one layer based on the second pore diameter. 【課題】ポア形成後埋め戻すことによってナノポア形成する技術では、ALDで成膜されるため、単原子レベルの加工尤度でナノポアが形成されるが、一般にALDで用いられるプロセスガス分子で形成されたナノポアはサブナノメートルオーダーであり、目的のナノポア径に合わせたプロセスガス分子設計やプロセス条件設定は現実的には困難である。【解決手段】第一のポア径を有する第一のナノポアを原子層成膜により埋めて第二のナノポアを形成し、第二のナノポアの第二のポア径を計測し、第二のポア径に基づいて、第二のナノポアの内壁の原子層を一層ずつ調整して第三のポア径を有する第三のナノポアを作製する。【選択図】 図1