RECEPTION DEVICE OF WORKPIECE

PROBLEM TO BE SOLVED: To provide a reception device of a workpiece having high cooling efficiency, which allows for compaction of a workpiece processing system, while reducing the usage of gas and the energy consumption incident to supply and exhaust of gas.SOLUTION: A reception device 1 of a semico...

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Bibliographische Detailangaben
Hauptverfasser: SHIGETA TAKASHI, TAKAOKA SHUNJI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a reception device of a workpiece having high cooling efficiency, which allows for compaction of a workpiece processing system, while reducing the usage of gas and the energy consumption incident to supply and exhaust of gas.SOLUTION: A reception device 1 of a semiconductor wafer is configured to direct the pressure in a closed space toward the atmospheric pressure while lowering the temperature of the semiconductor wafer W, by deriving gas with exhaust means 12 while introducing the gas toward the semiconductor wafer W mounted on a worktable in the closed space in vacuum state, by supply means 110, when passing the semiconductor wafer W in high temperature state into an atmospheric working chamber, the semiconductor wafer W being subjected to processing in a vacuum processing chamber. 【課題】被処理体の処理システムの小型化を実現できるとともに、気体の使用量及びその給排気に伴うエネルギの消費量を低減できる、冷却効率の高い被処理体の受容装置を提供する。【解決手段】半導体ウェーハの受容装置1は、真空処理室で処理を施された高温状態の半導体ウェーハWを大気圧作業室に受け渡す場合において、制御手段4が、真空状態にある閉止空間内の載置台に載置された半導体ウェーハWに向かって給気手段110より気体を導入させつつ、排気手段12より気体の導出を行わせることで、半導体ウェーハWの温度を低下させつつ閉止空間内の圧力を大気圧に向かわせるように構成される。【選択図】図5