FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND FILM DEPOSITION PROGRAM

PROBLEM TO BE SOLVED: To provide a film deposition apparatus, a film deposition method, and a film deposition program that can make uniform film characteristics, such as a film thickness and film hardness, of a coating formed on a surface of a material to be processed.SOLUTION: A film deposition app...

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Bibliographische Detailangaben
Hauptverfasser:	KANEDA HIDEKI, TAKAOKA YASUYUKI, TAKI KAZUYA, SHINODA KENTARO, KAMISAKA HIROYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a film deposition apparatus, a film deposition method, and a film deposition program that can make uniform film characteristics, such as a film thickness and film hardness, of a coating formed on a surface of a material to be processed.SOLUTION: A film deposition apparatus includes: a microwave supply part which supplies a microwave for generating plasma along a processing surface of a conductive material to be processed; a negative voltage application part which applies the material to be processed with a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed; and a control part which controls the microwave supply part and negative voltage application part. The microwave supply part has a microwave supply opening which propagates the microwave to be supplied to the expanded sheath layer, and the control part controls the microwave supply part and negative voltage application part so as to change a sheath thickness of the sheath layer during the supply of the microwave.