FILM DEPOSITION APPARATUS
PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of suppressing unnecessary consumption of energy by suppressing propagation of a surface wave to a wire, connected to a negative voltage application terminal member, etc.SOLUTION: A film deposition apparatus includes: a microwave s...
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| creator | KANEDA HIDEKI TAKAOKA YASUYUKI TAKI KAZUYA SHINODA KENTARO KAMISAKA HIROYUKI |
| description | PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of suppressing unnecessary consumption of energy by suppressing propagation of a surface wave to a wire, connected to a negative voltage application terminal member, etc.SOLUTION: A film deposition apparatus includes: a microwave supply part which supplies a microwave for generating plasma along a processing surface of a conductive material to be processed; a negative voltage application part which applies the material to be processed with a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed; a microwave supply opening which propagates the microwave supplied from the microwave supply part to the expanded sheath layer; a negative voltage application terminal member which is provided at a position opposite the microwave supply opening across at least a part of the material to be processed, which applies the material to be processed with a negative bias voltage applied by the negative voltage application part; and a surface wave control member which is provided projecting from an outer peripheral part of the negative voltage application terminal member to a sheath thickness direction of the sheath layer, and has a reflective power to the microwave propagated in the sheath layer. |
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a negative voltage application part which applies the material to be processed with a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed; a microwave supply opening which propagates the microwave supplied from the microwave supply part to the expanded sheath layer; a negative voltage application terminal member which is provided at a position opposite the microwave supply opening across at least a part of the material to be processed, which applies the material to be processed with a negative bias voltage applied by the negative voltage application part; and a surface wave control member which is provided projecting from an outer peripheral part of the negative voltage application terminal member to a sheath thickness direction of the sheath layer, and has a reflective power to the microwave propagated in the sheath layer.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141006&DB=EPODOC&CC=JP&NR=2014189897A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141006&DB=EPODOC&CC=JP&NR=2014189897A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KANEDA HIDEKI</creatorcontrib><creatorcontrib>TAKAOKA YASUYUKI</creatorcontrib><creatorcontrib>TAKI KAZUYA</creatorcontrib><creatorcontrib>SHINODA KENTARO</creatorcontrib><creatorcontrib>KAMISAKA HIROYUKI</creatorcontrib><title>FILM DEPOSITION APPARATUS</title><description>PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of suppressing unnecessary consumption of energy by suppressing propagation of a surface wave to a wire, connected to a negative voltage application terminal member, etc.SOLUTION: A film deposition apparatus includes: a microwave supply part which supplies a microwave for generating plasma along a processing surface of a conductive material to be processed; a negative voltage application part which applies the material to be processed with a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed; a microwave supply opening which propagates the microwave supplied from the microwave supply part to the expanded sheath layer; a negative voltage application terminal member which is provided at a position opposite the microwave supply opening across at least a part of the material to be processed, which applies the material to be processed with a negative bias voltage applied by the negative voltage application part; and a surface wave control member which is provided projecting from an outer peripheral part of the negative voltage application terminal member to a sheath thickness direction of the sheath layer, and has a reflective power to the microwave propagated in the sheath layer.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJB08_TxVXBxDfAP9gzx9PdTcAwIcAxyDAkN5mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGJoYWlhaW5o7GRCkCAF-KIK0</recordid><startdate>20141006</startdate><enddate>20141006</enddate><creator>KANEDA HIDEKI</creator><creator>TAKAOKA YASUYUKI</creator><creator>TAKI KAZUYA</creator><creator>SHINODA KENTARO</creator><creator>KAMISAKA HIROYUKI</creator><scope>EVB</scope></search><sort><creationdate>20141006</creationdate><title>FILM DEPOSITION APPARATUS</title><author>KANEDA HIDEKI ; 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a negative voltage application part which applies the material to be processed with a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed; a microwave supply opening which propagates the microwave supplied from the microwave supply part to the expanded sheath layer; a negative voltage application terminal member which is provided at a position opposite the microwave supply opening across at least a part of the material to be processed, which applies the material to be processed with a negative bias voltage applied by the negative voltage application part; and a surface wave control member which is provided projecting from an outer peripheral part of the negative voltage application terminal member to a sheath thickness direction of the sheath layer, and has a reflective power to the microwave propagated in the sheath layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | FILM DEPOSITION APPARATUS |
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