FILM DEPOSITION APPARATUS

PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of suppressing unnecessary consumption of energy by suppressing propagation of a surface wave to a wire, connected to a negative voltage application terminal member, etc.SOLUTION: A film deposition apparatus includes: a microwave s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KANEDA HIDEKI, TAKAOKA YASUYUKI, TAKI KAZUYA, SHINODA KENTARO, KAMISAKA HIROYUKI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of suppressing unnecessary consumption of energy by suppressing propagation of a surface wave to a wire, connected to a negative voltage application terminal member, etc.SOLUTION: A film deposition apparatus includes: a microwave supply part which supplies a microwave for generating plasma along a processing surface of a conductive material to be processed; a negative voltage application part which applies the material to be processed with a negative bias voltage for expanding a sheath layer along the processing surface of the material to be processed; a microwave supply opening which propagates the microwave supplied from the microwave supply part to the expanded sheath layer; a negative voltage application terminal member which is provided at a position opposite the microwave supply opening across at least a part of the material to be processed, which applies the material to be processed with a negative bias voltage applied by the negative voltage application part; and a surface wave control member which is provided projecting from an outer peripheral part of the negative voltage application terminal member to a sheath thickness direction of the sheath layer, and has a reflective power to the microwave propagated in the sheath layer.