SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE, PROGRAM AND STORAGE MEDIUM

PROBLEM TO BE SOLVED: To provide an art capable of inhibiting damages on an insulation film to be a base when a metal film is formed by using an F-containing material.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a liner film on a substrate where an insulation...

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Bibliographische Detailangaben
Hauptverfasser:	HARADA KAZUHIRO, ASHIHARA YOJI, NAKATANI KIMIHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an art capable of inhibiting damages on an insulation film to be a base when a metal film is formed by using an F-containing material.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a liner film on a substrate where an insulation film is formed on a surface; and a process of forming a metal-containing film on the liner film by using a gas which contains a metal element and fluorine.