SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a single crystal production apparatus and a method of producing a single crystal which enable acquisition of a single crystal excellent in quality by a relatively simple configuration and a single crystal.SOLUTION: A single crystal production apparatus (1) is for pro...

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Hauptverfasser: FUJII TOSHISUKE, KAWASE TOMOHIRO, HANEKI YOSHIAKI, HASHIO KATSUSHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a single crystal production apparatus and a method of producing a single crystal which enable acquisition of a single crystal excellent in quality by a relatively simple configuration and a single crystal.SOLUTION: A single crystal production apparatus (1) is for producing a single crystal by melting thermally a raw material held in a crucible (4) and then solidifying from one direction and includes an ampule (3), the crucible (4), a pedestal (2) and a heater (5). The pedestal (2) supports the ampule (3). The heater (5) is for heating the ampule (3) and the crucible (4). The material constituting the pedestal (2) has a thermal conductivity of 0.5 W/(m K) or higher, which is equal to or lower than the thermal conductivity of a single crystal to be formed. The material constituting the pedestal (2) has a light transmissivity of 10% or lower for the material of a thickness of 4 mm and light of wavelengths of 1,600-2,400 nm.