METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM

PROBLEM TO BE SOLVED: To suppress use of a catalyst gas while maintaining a film-forming rate.SOLUTION: A method for manufacturing a semiconductor device includes a step of forming an oxidation film on a substrate by performing a cycle including a step of supplying a material gas to a substrate and...

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Hauptverfasser: MIZUNO KANEKAZU, YANAGIDA KAZUTAKA, OKUBO SEIGO, HIROSE YOSHIRO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To suppress use of a catalyst gas while maintaining a film-forming rate.SOLUTION: A method for manufacturing a semiconductor device includes a step of forming an oxidation film on a substrate by performing a cycle including a step of supplying a material gas to a substrate and a step of supplying an ozone gas to the substrate a prescribed number of times. The material gas supply step supplies the material gas to the substrate in a state in which supply of a catalyst gas to the substrate is stopped. The ozone gas supply step supplies the ozone gas to the substrate in a state in which an amine-based catalyst gas is already supplied to the substrate.