NITRIDE SEMICONDUCTOR CRYSTAL OF GROUP 13 METAL IN PERIODIC TABLE

PROBLEM TO BE SOLVED: To provide a nitride semiconductor crystal of a group 13 metal in the periodic table usable as a ground substrate capable of producing a device having a desired characteristic at excellent yield.SOLUTION: A nitride semiconductor crystal of a group 13 metal in the periodic table...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	IKEDA HIROTAKA, KUBO SHUICHI, NAGAO SATORU, ENATSU YUKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a nitride semiconductor crystal of a group 13 metal in the periodic table usable as a ground substrate capable of producing a device having a desired characteristic at excellent yield.SOLUTION: A nitride semiconductor crystal of a group 13 metal in the periodic table in which a principal surface is a non-polar surface or a semi-polar surface, and the maximum width of basal surface lamination defects on the principal surface is 800 μm or less, and the principal surface includes basal surface lamination defects having respective widths which are different as much as five times or more, can be used as a ground substrate capable of producing a device having a desired characteristic at excellent yield.