SILVER ALLOY SPUTTERING TARGET FOR FORMING CONDUCTIVE FILM AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a silver alloy sputtering target for forming a conductive film, which can effectively suppress an arc discharge and splash, and a manufacturing method of the target.SOLUTION: A silver alloy sputtering target has a component composition that contains 0.1 - 1.5 mass% i...

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Bibliographische Detailangaben
Hauptverfasser: KOMIYAMA SHOZO, KOIKE SHINYA, FUNAKI SHINICHI, OKUDA SATOSHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a silver alloy sputtering target for forming a conductive film, which can effectively suppress an arc discharge and splash, and a manufacturing method of the target.SOLUTION: A silver alloy sputtering target has a component composition that contains 0.1 - 1.5 mass% in total of one or more types of In and Sn which are an element solid-solved in Ag, and the rest of Ag and inevitable impurities, and an average grain size of crystal grains of 1 μm or more and 30 μm or less with a variation in grain size of the crystal grains of 30% or less of the average grain size. The silver alloy sputtering target is produced by subjecting a cast ingot to hot rolling, cooling, cold rolling, heat treatment, and mechanical processing processes in this order.