SYSTEM AND METHOD TO MANUFACTURE MAGNETIC RANDOM ACCESS MEMORY

SYSTEM AND METHOD TO MANUFACTURE MAGNETIC RANDOM ACCESS MEMORY

PROBLEM TO BE SOLVED: To provide a system and method to manufacture magnetic random access memory.SOLUTION: In a particular embodiment, a method of making a magnetic tunnel junction memory system includes forming a portion of a metal layer in an unbranched source line having a substantially rectilin...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SEUNG KANG, KEN LEE, ROBERT J WALDEN, HARI M RAO, ZHU XIAOCHUN, MATTHEW M NOWAK, SEAN LI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a system and method to manufacture magnetic random access memory.SOLUTION: In a particular embodiment, a method of making a magnetic tunnel junction memory system includes forming a portion of a metal layer in an unbranched source line having a substantially rectilinear portion. The method also includes coupling the source line, at the substantially rectilinear portion, to a first transistor using a first via. The first transistor is configured to supply a first current received from the source line to a first magnetic tunnel junction device. The method includes coupling the source line to a second transistor using a second via, where the second transistor is configured to supply a second current received from the source line to a second magnetic tunnel junction device.