SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which uses SiC and has low on-resistance and achieves a stable withstand voltage at a high temperature; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device of the present embodiment comprises: an SiC...

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Bibliographische Detailangaben
Hauptverfasser: KATAUE TAKAHARU, DEGUCHI TADAYOSHI
Format: Patent
Sprache:eng
Schlagworte:
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