SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which uses SiC and has low on-resistance and achieves a stable withstand voltage at a high temperature; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device of the present embodiment comprises: an SiC substrate 2; an SiC drift layer 4 arranged on the SiC substrate; an SiC well region 5 formed on a partial surface of the SiC drift layer 4; a first high-concentration well region 5a which is formed on a partial surface of the SiC drift layer 4 and has an impurity concentration higher than that of the SiC well region 5 and which is arranged between the SiC well region 5 and the SiC drift layer 4; an SiC source region 6 formed on a partial surface of the SiC well region 5; an SiC base region 8 arranged adjacent to the SiC source region 6, the SiC well region 5 and the first SiC high-concentration well region 5a so as to be electrically connected with the first SiC high-concentration well region 5a; a gate insulation film 9; a gate electrode 10; an interlayer insulation film 20; a first electrode 21; and a second electrode 22.