SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device that allows improving the characteristics and to provide a method of manufacturing the same.SOLUTION: A semiconductor device includes a first electrode, an oxide semiconductor film, an insulating film, a second electrode, and a third electrode....

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Bibliographische Detailangaben
Hauptverfasser:	MOROOKA SATORU, FUKASE KAZUYA, MOMOSE HISAYO, OGURO TATSUYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device that allows improving the characteristics and to provide a method of manufacturing the same.SOLUTION: A semiconductor device includes a first electrode, an oxide semiconductor film, an insulating film, a second electrode, and a third electrode. The oxide semiconductor film has a first region, a second region, a third region, a fourth region, and a fifth region that are arranged in one direction. The insulating film is provided between the oxide semiconductor film and the first electrode. The second electrode is provided on the second region and is in contact with the second region by using the entire top surface of the second region as a contact surface. The third electrode is provided on the fourth region and is in contact with the fourth region by using the entire top surface of the fourth region as a contact surface. The oxygen concentration of the second region is lower than that of the third region. The oxygen concentration of the fourth region is lower than that of the third region.