RESISTANCE-VARIABLE NONVOLATILE MEMORY, AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To prevent characteristics of a resistance-variable nonvolatile memory from being deteriorated due to oxidation of a surface part of a lower electrode when depositing an interlayer insulation layer, and/or implantation of a component of etching gas to the lower electrode when etching the interlayer insulation layer.SOLUTION: A resistance-variable nonvolatile memory comprises a lower electrode 1, a buffer layer 2 covering a top face of the lower electrode, an interlayer insulation layer 6, a resistance variable layer 7 and an upper electrode 8. The interlayer insulation layer 6 has a through hole 6a and is formed to cover the buffer layer 2. The resistance-variable layer 7 is formed to be in contact with a top face of the buffer layer 2 inside of the through hole 6a. The buffer layer 2 includes a first portion 3 which is covered by the interlayer insulation layer 6, and the first portion 3 is formed from an oxide of a metal which is oxidized more easily than a material of the lower electrode.