DIAMOND SEMICONDUCTOR ELEMENT

DIAMOND SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide a diamond semiconductor element suitable for a power device of a high output, a high withstand voltage or under high environmental resistance.SOLUTION: A diamond semiconductor element comprises: p+ single crystal diamond; a p- layer composed of a diamond semiconducto...

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Hauptverfasser: SHIKADA SHINICHI, KATO YUKAKO, UMEZAWA HITOSHI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SHIKADA SHINICHI
KATO YUKAKO
UMEZAWA HITOSHI
description PROBLEM TO BE SOLVED: To provide a diamond semiconductor element suitable for a power device of a high output, a high withstand voltage or under high environmental resistance.SOLUTION: A diamond semiconductor element comprises: p+ single crystal diamond; a p- layer composed of a diamond semiconductor which is deposited on the p+ single crystal diamond; and an electrode formed on an electrode formation region of the p- layer. The number of first dislocation in the p- layer of the electrode formation region, which can be observed by an X-ray topography image of a diffraction vector [-404] but cannot be observed by an X-ray topography image of a diffraction vector [113] is 0, and second dislocation other than the first dislocation exists with a dislocation density of 1.0×10-2.0×10/cm.
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The number of first dislocation in the p- layer of the electrode formation region, which can be observed by an X-ray topography image of a diffraction vector [-404] but cannot be observed by an X-ray topography image of a diffraction vector [113] is 0, and second dislocation other than the first dislocation exists with a dislocation density of 1.0×10-2.0×10/cm.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140904&amp;DB=EPODOC&amp;CC=JP&amp;NR=2014160719A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140904&amp;DB=EPODOC&amp;CC=JP&amp;NR=2014160719A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIKADA SHINICHI</creatorcontrib><creatorcontrib>KATO YUKAKO</creatorcontrib><creatorcontrib>UMEZAWA HITOSHI</creatorcontrib><title>DIAMOND SEMICONDUCTOR ELEMENT</title><description>PROBLEM TO BE SOLVED: To provide a diamond semiconductor element suitable for a power device of a high output, a high withstand voltage or under high environmental resistance.SOLUTION: A diamond semiconductor element comprises: p+ single crystal diamond; a p- layer composed of a diamond semiconductor which is deposited on the p+ single crystal diamond; and an electrode formed on an electrode formation region of the p- layer. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title DIAMOND SEMICONDUCTOR ELEMENT
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