DIAMOND SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide a diamond semiconductor element suitable for a power device of a high output, a high withstand voltage or under high environmental resistance.SOLUTION: A diamond semiconductor element comprises: p+ single crystal diamond; a p- layer composed of a diamond semiconductor which is deposited on the p+ single crystal diamond; and an electrode formed on an electrode formation region of the p- layer. The number of first dislocation in the p- layer of the electrode formation region, which can be observed by an X-ray topography image of a diffraction vector [-404] but cannot be observed by an X-ray topography image of a diffraction vector [113] is 0, and second dislocation other than the first dislocation exists with a dislocation density of 1.0×10-2.0×10/cm.