ANISOTROPIC CONDUCTIVE ADHESIVE MATERIAL, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING ANISOTROPIC CONDUCTIVE ADHESIVE MATERIAL

PROBLEM TO BE SOLVED: To provide a light-emitting device which exhibits a high intensity of radiation light.SOLUTION: An anisotropic conductive adhesive material 12 is used to glue an LED chip 20 to an electrode base 11. The anisotropic conductive adhesive material 12 comprises conductive particles...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KANIZAWA MORIYUKI, ISHIGAMI AKIRA, UMAGOE HIDEAKI, AOKI MASAHARU, NAMIKI HIDEJI
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL PAINTS POLISHES SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION USE OF MATERIALS AS ADHESIVES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a light-emitting device which exhibits a high intensity of radiation light.SOLUTION: An anisotropic conductive adhesive material 12 is used to glue an LED chip 20 to an electrode base 11. The anisotropic conductive adhesive material 12 comprises conductive particles 1 each having: a resin particle 2; an underlying layer 3 which consists of a metallic thin film and is formed on the surface of the resin particle 2 by electric field plating; and a light-reflection layer 4 of a silver alloy formed on the surface of the underlying layer 3 by sputtering. The surface of the underlying layer 3 is planarized, and never suffers damage from sputtering particles and therefore, the light reflection layer 4 has a high reflectance. A sputtering target used for the light reflection layer includes 0.1-3.0 wt.% of Bi and 0.1-2.0 wt.% of Nd to a total of 100 wt.% of Ag, Bi and Nd.