SILICON CARBIDE SINGLE CRYSTAL, AND PRODUCTION METHOD OF SILICON CARBIDE SINGLE CRYSTAL

SILICON CARBIDE SINGLE CRYSTAL, AND PRODUCTION METHOD OF SILICON CARBIDE SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a high-quality SiC single crystal which is suitable for producing a device capable of suppressing a leak current.SOLUTION: Screw dislocation 2 is classified into L dislocation 2a which has large strain and can be a generation factor of a leak current and nL dislocati...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ONDA SHOICHI, KITO YASUO, WATANABE HIROKI, KONDO HIROYUKI
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a high-quality SiC single crystal which is suitable for producing a device capable of suppressing a leak current.SOLUTION: Screw dislocation 2 is classified into L dislocation 2a which has large strain and can be a generation factor of a leak current and nL dislocation 2b which has small strain and cannot be a generation factor of a leak current, and the density of the L dislocation 2a is set to be 300/cmor less, preferably 100/cmor less. Hereby, a high-quality SiC single crystal 1 which is suitable for producing a device capable of suppressing a leak current can be obtained.