GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light-emitting element which inhibits the occurrence of leakage current in an embedded element in which a contact electrode is arranged to be embedded at a location between a semiconductor layer and a support substrate; and provide a...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	UEMURA TOSHIYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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