GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light-emitting element which inhibits the occurrence of leakage current in an embedded element in which a contact electrode is arranged to be embedded at a location between a semiconductor layer and a support substrate; and provide a manufacturing method of the group III nitride semiconductor light-emitting element.SOLUTION: A light-emitting element 100 is a substrate lift-off type semiconductor light-emitting element from which a growth substrate is removed. The light-emitting element 100 comprises a support substrate 110, a junction layer 120, a cover metal layer 130, an etching stop layer 140, a semiconductor layer 150, a reflective film 160, a passivation film 170, a p-contact electrode PC, an n-contact electrode NC, a p-electrode P1 and an n-electrode N1. The p-contact electrode PC and the n-contact electrode NC are formed in shapes which do not overlap each other when orthographically projected to a substrate surface of the support substrate 110.