GROUP III NITRIDE COMPOSITE SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a group III nitride composite substrate with low sheet resistance, which can be obtained at high yield, a method for manufacturing the same, and a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate.SOLUTI...

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Bibliographische Detailangaben
Hauptverfasser:	YAGO AKIHIRO, MATSUMOTO NAOKI, ISHIBASHI KEIJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a group III nitride composite substrate with low sheet resistance, which can be obtained at high yield, a method for manufacturing the same, and a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate.SOLUTION: A group III nitride composite substrate 1 comprises: a group III nitride film 13; and a support substrate 11 formed of a material whose chemical constitution is different from the group III nitride film 13. The group III nitride film 13 is directly or indirectly bonded to the support substrate 11. A thickness of the group III nitride film 13 is equal to or more than 10 μm. A sheet resistance on a main plane 13 m at the group III nitride film 13 side, is equal to or less than 200 /sq. A method for manufacturing a group III nitride composite substrate 1 comprises: a step of directly or indirectly sticking the group III nitride film 13 to the support substrate 11; and a step of thinning at least one of stuck the group III nitride film 13 and the support substrate.