PRODUCTION METHOD OF NITRIDE SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a production method of a nitride single crystal having an improved deposition rate, in a method for depositing a nitride single crystal after dissolving a raw material containing a nitride crystal into an ammonia solvent.SOLUTION: In a method for depositing a nitride...

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Bibliographische Detailangaben

1. Verfasser:	TAMITSUJI SHINYA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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