PRODUCTION METHOD OF NITRIDE SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a production method of a nitride single crystal having an improved deposition rate, in a method for depositing a nitride single crystal after dissolving a raw material containing a nitride crystal into an ammonia solvent.SOLUTION: In a method for depositing a nitride...

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1. Verfasser:	TAMITSUJI SHINYA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a production method of a nitride single crystal having an improved deposition rate, in a method for depositing a nitride single crystal after dissolving a raw material containing a nitride crystal into an ammonia solvent.SOLUTION: In a method for depositing a nitride single crystal 50 after dissolving a raw material 5 containing a nitride crystal into an ammonia solvent, the nitride single crystal 50 is deposited in the presence of an additive 13 containing at least one kind of element selected from a group comprising vanadium, zirconium, titanium, hafnium and chromium, and a halogen element.