DC MAGNETRON TYPE REACTIVE SPUTTERING APPARATUS AND METHOD

PROBLEM TO BE SOLVED: To provide a dc magnetron type reactive sputtering apparatus which allows preventing insulation breakdown induced by a semiconductor or dielectric compound thin film being deposited on a non-sputtering region and stably forming a high-quality sputtering film, in the DC magnetro...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	NOMURA FUMIYASU, KANASUGI KAZUYA
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a dc magnetron type reactive sputtering apparatus which allows preventing insulation breakdown induced by a semiconductor or dielectric compound thin film being deposited on a non-sputtering region and stably forming a high-quality sputtering film, in the DC magnetron type reactive sputtering apparatus using reactive gas to form an electrically conductive target and a semiconductor or an insulator.SOLUTION: In a DC magnetron type reactive sputtering apparatus, a deposition preventive plate 7 is provided to cover an upper part of a non-sputtering region 2 of an electrically conductive target 3. The electrical resistance between the target and the deposition preventive plate is 10 or more. A gap is provided between the deposition preventive plate and the target.