SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which can form an opening having a sufficient opening diameter in a region sandwiched by a pair of bit lines and in which a high-quality contact using the opening is formed.SOLUTION: A semiconductor device comprises: a first conductive layer BS; a first interlayer insulation film II2; bit lines BL; first insulation films CL; a second interlayer insulation film II3; and a second conductive layer SC. The first insulation films CL which cover lateral faces of the bit lines BL have parts perpendicular to a principal surface of a semiconductor substrate SUB in a region lower than a position located below an uppermost part of the first insulation films CL by a thickness of the first insulation films CL which cover the lateral faces of the bit lines BL at lowermost parts of the bit lines BL in a direction along the principal surface of the semiconductor substrate SUB.