EVAPORATION SOURCE DEVICE

PROBLEM TO BE SOLVED: To provide an evaporation source device which allows easy adjustment of the positional relationship between each jet nozzle and a substrate in a line-shaped evaporation source and whose distribution of film thicknesses is adjustable without opening of a vacuum tank to the atmos...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUMOTO EIICHI, UCHIDA KEIJI, MAKI SHUJI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an evaporation source device which allows easy adjustment of the positional relationship between each jet nozzle and a substrate in a line-shaped evaporation source and whose distribution of film thicknesses is adjustable without opening of a vacuum tank to the atmosphere.SOLUTION: An evaporation source device includes a material storage portion 1 storing a vapor deposition material and a plurality of jet nozzle parts 4 having a jet nozzle 3 jetting a vapor deposition material evaporated by heating in the material storage portion 1 toward a substrate 6 on the opposite side. In each of the jet nozzle parts 4, there are provided a jet nozzle moving mechanism for moving the jet nozzle 3 relative to the substrate 6 and a movement control mechanism for controlling the jet nozzle moving mechanism so that the distribution of film thicknesses of thin films formed on the substrate 6 is adjustable during vapor deposition.