DEPOSITION METHOD OF SILICON FILM AND DEPOSITION FILM DEVICE

PROBLEM TO BE SOLVED: To provide a deposition method of a silicon film which can respond to a reduction request of a film thickness, and which can improve the accuracy of surface roughness.SOLUTION: A deposition method of a silicon film comprises: a step (step 1) in which a base is heated, aminosila...

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Bibliographische Detailangaben
Hauptverfasser:	NAGATA TOMOYUKI, MIYAHARA TAKAHIRO, OBE SATOYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a deposition method of a silicon film which can respond to a reduction request of a film thickness, and which can improve the accuracy of surface roughness.SOLUTION: A deposition method of a silicon film comprises: a step (step 1) in which a base is heated, aminosilane based gas is supplied to the heated base-surface, and a seed layer is formed on the base surface; and a step (step 2) in which the base is heated, silane gas including no amino group is supplied to the seed layer on the heated base-surface, and a silicon film is formed on the seed layer. The aminosilane based gas used in the step 1 includes two silicons or more in the molecular formula of the aminosilane based gas.