FORMATION METHOD OF SEED LAYER, DEPOSITION METHOD OF SILICON FILM AND DEPOSITION FILM DEVICE

PROBLEM TO BE SOLVED: To provide a formation method of a seed layer which can respond to a reduction request in a deposition film process temperature, which can maintain and increase the accuracy of surface roughness of a thin film formed on a seed layer, and which can improve an in-plane uniformity...

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Bibliographische Detailangaben
Hauptverfasser:	NAGATA TOMOYUKI, MIYAHARA TAKAHIRO, OBE SATOYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a formation method of a seed layer which can respond to a reduction request in a deposition film process temperature, which can maintain and increase the accuracy of surface roughness of a thin film formed on a seed layer, and which can improve an in-plane uniformity.SOLUTION: A formation method of a seed layer comprises: a step (step 11) in which aminosilane based gas is supplied to a heated base-surface to form a first seed layer on the base surface; and a step (step 12) in which high order silane gas higher than disilane is supplied to the heated base-surface to form a second seed layer on the first seed layer formed on the base surface. A treatment temperature in the step 11 is less than 400°C and is a temperature at which at least silicon included in the aminosilane based gas can be absorbed on the base surface or more. A treatment temperature in the step 12 is less than 400°C and is a temperature at which at least silicon included in the high order silane gas higher than disilane can be absorbed on the first seed layer formed on the base surface or more.