INTEGRATED CIRCUIT INCLUDING INTEGRATED PASSIVE DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide an integrated circuit including an integrated passive device and a method of manufacturing the same.SOLUTION: A method of forming an integrated passive device (e.g., a metal-insulator-metal or MIM capacitor) comprises: depositing a composite electrode over a semiconductor substrate (e.g., on a dielectric layer above the substrate surface); and depositing an insulator layer 140 over the composite electrode. The composite electrode comprises: an underlying electrode 120; and an overlying electrode 150 deposited on a top surface of the underlying electrode. The underlying electrode is formed from a first conductive material (e.g., AlCuW), and the overlying electrode is formed from a second, different conductive material (e.g., AlCu). The top surface of the underlying electrode may have a relatively rough surface morphology, and the top surface of the overlying electrode may have a relatively smooth surface morphology. For high frequency, high power applications, both the composite electrode and the insulator layer may be thicker than in some conventional integrated passive devices.