SYSTEMS AND METHODS FOR OHMIC CONTACTS IN SILICON CARBIDE DEVICES

PROBLEM TO BE SOLVED: To easily form ohmic contacts for silicon carbide devices without causing problems such as defects.SOLUTION: A silicon carbide device is presented that includes a gate electrode disposed over a portion of a silicon carbide substrate, and a dielectric film disposed over the gate...

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Hauptverfasser:	ZACHARY MATTHEW STUM, REZA GHANDI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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