HETEROJUNCTION BIPOLAR TRANSISTOR, POWER AMPLIFIER USING THE SAME, AND METHOD OF MANUFACTURING HETEROJUNCTION BIPOLAR TRANSISTOR

HETEROJUNCTION BIPOLAR TRANSISTOR, POWER AMPLIFIER USING THE SAME, AND METHOD OF MANUFACTURING HETEROJUNCTION BIPOLAR TRANSISTOR

PROBLEM TO BE SOLVED: To combine prevention of thermorunaway and prevention of degradation in power amplifier characteristics at high temperature.SOLUTION: A heterojunction bipolar transistor 100 comprises a ballast resistance layer 7. The ballast resistance layer 7 comprises: an AlGaAs emitter ball...

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Bibliographische Detailangaben
Hauptverfasser: KUROKAWA ATSUSHI, OBE ISAO, UMEMOTO YASUNARI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To combine prevention of thermorunaway and prevention of degradation in power amplifier characteristics at high temperature.SOLUTION: A heterojunction bipolar transistor 100 comprises a ballast resistance layer 7. The ballast resistance layer 7 comprises: an AlGaAs emitter ballast resistance layer 7a having a positive resistivity temperature coefficient in a first temperature range (room temperature-100°C) and a second temperature range (100°C or more); and an AlGaAs emitter ballast resistance layer 7b having a positive resistivity temperature coefficient in the second temperature range.