PHOTOMASK BLANK HAVING RESIST, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF PHOTOMASK

PROBLEM TO BE SOLVED: To provide a photomask blank having a resist, capable of reducing size distribution of a resist pattern generated at a development process in manufacturing a photomask, improving a pattern resolution, reducing failure occurrence, and responding to a requirement of miniaturizati...

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Bibliographische Detailangaben
Hauptverfasser:	YAMADA TAKASHI, FUJIMURA YUKIHIRO, TANI AYAKO, FURUGEN RYO, TAKAYAMA TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a photomask blank having a resist, capable of reducing size distribution of a resist pattern generated at a development process in manufacturing a photomask, improving a pattern resolution, reducing failure occurrence, and responding to a requirement of miniaturization, and also to provide a manufacturing method thereof and a manufacturing method of a photomask.SOLUTION: A predetermined plasma treatment is applied on a surface of a resist film formed on a principal surface of a photomask blank, so that a contact angle of an aqueous solution system of the surface of the resist film to a developer can be improved to be within a predetermined range. A photomask is manufactured using the photomask blank having the resist film with the contact angle thereof within the predetermined range.