METHOD OF INSPECTING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a TEG used in evaluation of a field-effect transistor capable of preventing a gate insulating film of a field-effect transistor forming the TEG from suffering damage by an electric charge caused by a plasma process.SOLUTION: An anode of a protection diode DP is conne...

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Bibliographische Detailangaben
Hauptverfasser:	FUKUO NORITAKA, SUGIMOTO HIROMITSU, AONO HIDEKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a TEG used in evaluation of a field-effect transistor capable of preventing a gate insulating film of a field-effect transistor forming the TEG from suffering damage by an electric charge caused by a plasma process.SOLUTION: An anode of a protection diode DP is connected to a gate electrode of a MOSFET QU for evaluation via a p-channel-type MOSFET QP, and the MOSFET QU is evaluated using a TEG in which a cathode of a protection diode DN is connected to the gate electrode of the MOSFET QU via an n-channel-type MOSFET QN.