SAMPLE HOLDER
PROBLEM TO BE SOLVED: To provide a sample holder used as an electrode in a processing apparatus, and capable of improving the in-plane distribution of a film formed on a substrate mounted.SOLUTION: The sample holder stored in a semiconductor manufacturing apparatus, and can be used as an electrode i...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | SARUWATARI TETSUYA IMAI DAISUKE |
description | PROBLEM TO BE SOLVED: To provide a sample holder used as an electrode in a processing apparatus, and capable of improving the in-plane distribution of a film formed on a substrate mounted.SOLUTION: The sample holder stored in a semiconductor manufacturing apparatus, and can be used as an electrode in the processing by the semiconductor manufacturing apparatus has a substrate mounting surface of uniform height, in which a substrate mounting region for mounting a processed substrate is defined to extend in the vertical direction. At least the region of the substrate mounting surface, defining the substrate mounting region, is entirely composed of a porous material. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2014107414A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2014107414A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2014107414A3</originalsourceid><addsrcrecordid>eNrjZOANdvQN8HFV8PD3cXEN4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGJoYG5iaGJo7GRCkCANu2HPg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SAMPLE HOLDER</title><source>esp@cenet</source><creator>SARUWATARI TETSUYA ; IMAI DAISUKE</creator><creatorcontrib>SARUWATARI TETSUYA ; IMAI DAISUKE</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a sample holder used as an electrode in a processing apparatus, and capable of improving the in-plane distribution of a film formed on a substrate mounted.SOLUTION: The sample holder stored in a semiconductor manufacturing apparatus, and can be used as an electrode in the processing by the semiconductor manufacturing apparatus has a substrate mounting surface of uniform height, in which a substrate mounting region for mounting a processed substrate is defined to extend in the vertical direction. At least the region of the substrate mounting surface, defining the substrate mounting region, is entirely composed of a porous material.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140609&DB=EPODOC&CC=JP&NR=2014107414A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140609&DB=EPODOC&CC=JP&NR=2014107414A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SARUWATARI TETSUYA</creatorcontrib><creatorcontrib>IMAI DAISUKE</creatorcontrib><title>SAMPLE HOLDER</title><description>PROBLEM TO BE SOLVED: To provide a sample holder used as an electrode in a processing apparatus, and capable of improving the in-plane distribution of a film formed on a substrate mounted.SOLUTION: The sample holder stored in a semiconductor manufacturing apparatus, and can be used as an electrode in the processing by the semiconductor manufacturing apparatus has a substrate mounting surface of uniform height, in which a substrate mounting region for mounting a processed substrate is defined to extend in the vertical direction. At least the region of the substrate mounting surface, defining the substrate mounting region, is entirely composed of a porous material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOANdvQN8HFV8PD3cXEN4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGJoYG5iaGJo7GRCkCANu2HPg</recordid><startdate>20140609</startdate><enddate>20140609</enddate><creator>SARUWATARI TETSUYA</creator><creator>IMAI DAISUKE</creator><scope>EVB</scope></search><sort><creationdate>20140609</creationdate><title>SAMPLE HOLDER</title><author>SARUWATARI TETSUYA ; IMAI DAISUKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2014107414A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SARUWATARI TETSUYA</creatorcontrib><creatorcontrib>IMAI DAISUKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SARUWATARI TETSUYA</au><au>IMAI DAISUKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SAMPLE HOLDER</title><date>2014-06-09</date><risdate>2014</risdate><abstract>PROBLEM TO BE SOLVED: To provide a sample holder used as an electrode in a processing apparatus, and capable of improving the in-plane distribution of a film formed on a substrate mounted.SOLUTION: The sample holder stored in a semiconductor manufacturing apparatus, and can be used as an electrode in the processing by the semiconductor manufacturing apparatus has a substrate mounting surface of uniform height, in which a substrate mounting region for mounting a processed substrate is defined to extend in the vertical direction. At least the region of the substrate mounting surface, defining the substrate mounting region, is entirely composed of a porous material.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_JP2014107414A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | SAMPLE HOLDER |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T05%3A14%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SARUWATARI%20TETSUYA&rft.date=2014-06-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2014107414A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |