SAMPLE HOLDER

PROBLEM TO BE SOLVED: To provide a sample holder used as an electrode in a processing apparatus, and capable of improving the in-plane distribution of a film formed on a substrate mounted.SOLUTION: The sample holder stored in a semiconductor manufacturing apparatus, and can be used as an electrode i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SARUWATARI TETSUYA, IMAI DAISUKE
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator SARUWATARI TETSUYA
IMAI DAISUKE
description PROBLEM TO BE SOLVED: To provide a sample holder used as an electrode in a processing apparatus, and capable of improving the in-plane distribution of a film formed on a substrate mounted.SOLUTION: The sample holder stored in a semiconductor manufacturing apparatus, and can be used as an electrode in the processing by the semiconductor manufacturing apparatus has a substrate mounting surface of uniform height, in which a substrate mounting region for mounting a processed substrate is defined to extend in the vertical direction. At least the region of the substrate mounting surface, defining the substrate mounting region, is entirely composed of a porous material.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2014107414A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2014107414A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2014107414A3</originalsourceid><addsrcrecordid>eNrjZOANdvQN8HFV8PD3cXEN4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGJoYG5iaGJo7GRCkCANu2HPg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SAMPLE HOLDER</title><source>esp@cenet</source><creator>SARUWATARI TETSUYA ; IMAI DAISUKE</creator><creatorcontrib>SARUWATARI TETSUYA ; IMAI DAISUKE</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a sample holder used as an electrode in a processing apparatus, and capable of improving the in-plane distribution of a film formed on a substrate mounted.SOLUTION: The sample holder stored in a semiconductor manufacturing apparatus, and can be used as an electrode in the processing by the semiconductor manufacturing apparatus has a substrate mounting surface of uniform height, in which a substrate mounting region for mounting a processed substrate is defined to extend in the vertical direction. At least the region of the substrate mounting surface, defining the substrate mounting region, is entirely composed of a porous material.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140609&amp;DB=EPODOC&amp;CC=JP&amp;NR=2014107414A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140609&amp;DB=EPODOC&amp;CC=JP&amp;NR=2014107414A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SARUWATARI TETSUYA</creatorcontrib><creatorcontrib>IMAI DAISUKE</creatorcontrib><title>SAMPLE HOLDER</title><description>PROBLEM TO BE SOLVED: To provide a sample holder used as an electrode in a processing apparatus, and capable of improving the in-plane distribution of a film formed on a substrate mounted.SOLUTION: The sample holder stored in a semiconductor manufacturing apparatus, and can be used as an electrode in the processing by the semiconductor manufacturing apparatus has a substrate mounting surface of uniform height, in which a substrate mounting region for mounting a processed substrate is defined to extend in the vertical direction. At least the region of the substrate mounting surface, defining the substrate mounting region, is entirely composed of a porous material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOANdvQN8HFV8PD3cXEN4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGJoYG5iaGJo7GRCkCANu2HPg</recordid><startdate>20140609</startdate><enddate>20140609</enddate><creator>SARUWATARI TETSUYA</creator><creator>IMAI DAISUKE</creator><scope>EVB</scope></search><sort><creationdate>20140609</creationdate><title>SAMPLE HOLDER</title><author>SARUWATARI TETSUYA ; IMAI DAISUKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2014107414A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SARUWATARI TETSUYA</creatorcontrib><creatorcontrib>IMAI DAISUKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SARUWATARI TETSUYA</au><au>IMAI DAISUKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SAMPLE HOLDER</title><date>2014-06-09</date><risdate>2014</risdate><abstract>PROBLEM TO BE SOLVED: To provide a sample holder used as an electrode in a processing apparatus, and capable of improving the in-plane distribution of a film formed on a substrate mounted.SOLUTION: The sample holder stored in a semiconductor manufacturing apparatus, and can be used as an electrode in the processing by the semiconductor manufacturing apparatus has a substrate mounting surface of uniform height, in which a substrate mounting region for mounting a processed substrate is defined to extend in the vertical direction. At least the region of the substrate mounting surface, defining the substrate mounting region, is entirely composed of a porous material.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2014107414A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title SAMPLE HOLDER
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T05%3A14%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SARUWATARI%20TETSUYA&rft.date=2014-06-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2014107414A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true