METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING SYSTEM, AND SUBSTRATE PROCESSING DEVICE

PROBLEM TO BE SOLVED: To shorten the use time of an accelerator for forming an n layer.SOLUTION: A method for manufacturing a semiconductor device comprises: a step S10 of irradiating a substrate with a particle beam using an accelerator (irradiation step); and a step S12 of processing the substrate...

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Hauptverfasser:	SAKANE JIN, ITO SEISHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Zusammenfassung:	PROBLEM TO BE SOLVED: To shorten the use time of an accelerator for forming an n layer.SOLUTION: A method for manufacturing a semiconductor device comprises: a step S10 of irradiating a substrate with a particle beam using an accelerator (irradiation step); and a step S12 of processing the substrate with plasma containing hydrogen to form an n layer on the substrate (plasma processing step). This method may include a step S14 of annealing the substrate after the plasma processing step (annealing step). The accelerator may be a circular accelerator or a linear accelerator. The particle beam may contain a light ion.