GAS-BARRIER FILM AND PRODUCTION METHOD OF THE SAME
PROBLEM TO BE SOLVED: To provide a gas-barrier film that has flexibility, mechanical strength and barrier performance, and is excellent in durability in a case in which temperature change generates like a solar battery and an electronic component.SOLUTION: There is provided a gas-barrier film 1 that...
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| creator | ITO HIROHIDE |
| description | PROBLEM TO BE SOLVED: To provide a gas-barrier film that has flexibility, mechanical strength and barrier performance, and is excellent in durability in a case in which temperature change generates like a solar battery and an electronic component.SOLUTION: There is provided a gas-barrier film 1 that includes: a substrate 2; and a barrier layer 3 that is formed on one side or both sides of the substrate. The barrier layer 3 contains silicon, oxygen and carbon, and a carbon distribution curve that shows a relationship between a distance from a surface of the barrier layer 3 in a film thickness direction of the barrier layer 3, and a ratio of a carbon atom (atomic ratio of carbon) to the total amount of a silicon atom, an oxygen atom and a carbon atom has at least three extremal values, a value of variation in a distance between neighboring extremal values is 0.35 or more and 1.0 or less. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2014100806A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2014100806A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2014100806A3</originalsourceid><addsrcrecordid>eNrjZDBydwzWdXIMCvJ0DVJw8_TxVXD0c1EICPJ3CXUO8fT3U_B1DfHwd1Hwd1MI8XBVCHb0deVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhiaGBgYWBmaOxkQpAgCV3CbH</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GAS-BARRIER FILM AND PRODUCTION METHOD OF THE SAME</title><source>esp@cenet</source><creator>ITO HIROHIDE</creator><creatorcontrib>ITO HIROHIDE</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a gas-barrier film that has flexibility, mechanical strength and barrier performance, and is excellent in durability in a case in which temperature change generates like a solar battery and an electronic component.SOLUTION: There is provided a gas-barrier film 1 that includes: a substrate 2; and a barrier layer 3 that is formed on one side or both sides of the substrate. The barrier layer 3 contains silicon, oxygen and carbon, and a carbon distribution curve that shows a relationship between a distance from a surface of the barrier layer 3 in a film thickness direction of the barrier layer 3, and a ratio of a carbon atom (atomic ratio of carbon) to the total amount of a silicon atom, an oxygen atom and a carbon atom has at least three extremal values, a value of variation in a distance between neighboring extremal values is 0.35 or more and 1.0 or less.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; METALLURGY ; PERFORMING OPERATIONS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140605&DB=EPODOC&CC=JP&NR=2014100806A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140605&DB=EPODOC&CC=JP&NR=2014100806A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ITO HIROHIDE</creatorcontrib><title>GAS-BARRIER FILM AND PRODUCTION METHOD OF THE SAME</title><description>PROBLEM TO BE SOLVED: To provide a gas-barrier film that has flexibility, mechanical strength and barrier performance, and is excellent in durability in a case in which temperature change generates like a solar battery and an electronic component.SOLUTION: There is provided a gas-barrier film 1 that includes: a substrate 2; and a barrier layer 3 that is formed on one side or both sides of the substrate. The barrier layer 3 contains silicon, oxygen and carbon, and a carbon distribution curve that shows a relationship between a distance from a surface of the barrier layer 3 in a film thickness direction of the barrier layer 3, and a ratio of a carbon atom (atomic ratio of carbon) to the total amount of a silicon atom, an oxygen atom and a carbon atom has at least three extremal values, a value of variation in a distance between neighboring extremal values is 0.35 or more and 1.0 or less.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>LAYERED PRODUCTS</subject><subject>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBydwzWdXIMCvJ0DVJw8_TxVXD0c1EICPJ3CXUO8fT3U_B1DfHwd1Hwd1MI8XBVCHb0deVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhiaGBgYWBmaOxkQpAgCV3CbH</recordid><startdate>20140605</startdate><enddate>20140605</enddate><creator>ITO HIROHIDE</creator><scope>EVB</scope></search><sort><creationdate>20140605</creationdate><title>GAS-BARRIER FILM AND PRODUCTION METHOD OF THE SAME</title><author>ITO HIROHIDE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2014100806A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>LAYERED PRODUCTS</topic><topic>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>ITO HIROHIDE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ITO HIROHIDE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GAS-BARRIER FILM AND PRODUCTION METHOD OF THE SAME</title><date>2014-06-05</date><risdate>2014</risdate><abstract>PROBLEM TO BE SOLVED: To provide a gas-barrier film that has flexibility, mechanical strength and barrier performance, and is excellent in durability in a case in which temperature change generates like a solar battery and an electronic component.SOLUTION: There is provided a gas-barrier film 1 that includes: a substrate 2; and a barrier layer 3 that is formed on one side or both sides of the substrate. The barrier layer 3 contains silicon, oxygen and carbon, and a carbon distribution curve that shows a relationship between a distance from a surface of the barrier layer 3 in a film thickness direction of the barrier layer 3, and a ratio of a carbon atom (atomic ratio of carbon) to the total amount of a silicon atom, an oxygen atom and a carbon atom has at least three extremal values, a value of variation in a distance between neighboring extremal values is 0.35 or more and 1.0 or less.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY PERFORMING OPERATIONS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING |
| title | GAS-BARRIER FILM AND PRODUCTION METHOD OF THE SAME |
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