ION IMPLANTATION DEVICE AND ION IMPLANTATION METHOD

PROBLEM TO BE SOLVED: To provide an ion implantation device and an ion implantation method which are used over a wide range.SOLUTION: An ion implantation device 100 includes a beam line device 104 for transporting ions from an ion source 102 to an implantation processing chamber 106. The implantation processing chamber 106 includes a body holding part 107 which mechanically scans a workpiece W in a beam irradiation region 105. The beam line device 104 can operate with a first implantation setting configuration S1 suitable to transportation of a low-energy/high-current beam for high-dose implantation in the workpiece W and a second implantation setting configuration S2 suitable to transportation of a high-energy/low-current beam for low-dose implantation in the workpiece W. In the first implantation setting configuration S1 and second implantation setting configuration S2, a reference beam center locus of a beam line is the same from the ion source 102 to the implantation processing chamber 106.