THIN FILM FORMING DEVICE

PROBLEM TO BE SOLVED: To provide a thin film forming device capable of cleaning easily an electrode unit without plasma cleaning, to thereby reduce device cost, and improving the operation rate of the device.SOLUTION: A thin film forming device 1 in which raw material gas is supplied into a chamber...

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Bibliographische Detailangaben
Hauptverfasser:	YAMASHITA MASAMITSU, FUJIMOTO TAKAYOSHI, IWADE TAKU
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a thin film forming device capable of cleaning easily an electrode unit without plasma cleaning, to thereby reduce device cost, and improving the operation rate of the device.SOLUTION: A thin film forming device 1 in which raw material gas is supplied into a chamber 2 for storing a substrate W and an electrode unit 3 for generating plasma, and the raw material gas is exposed to a plasma environment formed in the chamber, to thereby form a thin film on the substrate, is constituted as follows: the electrode unit has an electrode part formed of a conductor and a dielectric part positioned in the chamber, and a peelable film 7 which is peelable by wiping is formed at least on a part where the dielectric part is positioned in the chamber.