CONDUCTIVE OXIDE, OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a conductive oxide which is inexpensive and stably supplied and capable of forming an oxide semiconductor film having high carrier mobility, and to provide an oxide semiconductor film and a semiconductor device including an oxide semiconductor film.SOLUTION: The cond...

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Hauptverfasser:	SOGABE KOICHI, MIYANAGA YOSHINORI, KURISU KENICHI, AWATA HIDEAKI
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONCRETE CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY INSULATORS LIME, MAGNESIA METALLURGY REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a conductive oxide which is inexpensive and stably supplied and capable of forming an oxide semiconductor film having high carrier mobility, and to provide an oxide semiconductor film and a semiconductor device including an oxide semiconductor film.SOLUTION: The conductive oxide contains crystalline InAlZnO(m is 1 or more natural number) and crystalline ZnAlO. The oxide semiconductor film is formed by a sputtering method using such a conductive oxide as a target. The semiconductor device includes such an oxide semiconductor film.