SOLID STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREFOR

SOLID STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide an easy-to-manufacture solid state image sensor producing homogeneous image data, and to provide a manufacturing method for solid state image sensor.SOLUTION: A solid state image sensor 1 includes a substrate 11, a plurality of photoelectric conversion parts 12 forme...

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Hauptverfasser: AKAGI YUKO, OGAWA TAKAHIRO
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator AKAGI YUKO
OGAWA TAKAHIRO
description PROBLEM TO BE SOLVED: To provide an easy-to-manufacture solid state image sensor producing homogeneous image data, and to provide a manufacturing method for solid state image sensor.SOLUTION: A solid state image sensor 1 includes a substrate 11, a plurality of photoelectric conversion parts 12 formed in the substrate 11 and generating charges by performing photoelectric conversion of incident light, a first light shielding film 15 formed above the substrate 11 and shielding the light impinging on the photoelectric conversion part, and a second light shielding film 17 formed above the first light shielding film 15 and shielding the light impinging on the photoelectric conversion part 12. Furthermore, the solid state image sensor 1 is provided with a first area 30 through which light enters the photoelectric conversion part 12, a second area 50 which is shielded when the photoelectric conversion part 12 is covered with the second light shielding film 17, and a third area 90 located between the first area 30 and second area 50, and shielded when the photoelectric conversion part 12 is covered with the first light shielding film 15.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2014086552A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2014086552A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2014086552A3</originalsourceid><addsrcrecordid>eNrjZLAK9vfxdFEIDnEMcVXw9HV0d1UIdvUL9g9ScPRzUfB19At1c3QOCQ3y9HNX8HUN8fB3UQjxcA1ydfMP4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGJgYWZqamRo7GRCkCAAGFKXc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SOLID STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREFOR</title><source>esp@cenet</source><creator>AKAGI YUKO ; OGAWA TAKAHIRO</creator><creatorcontrib>AKAGI YUKO ; OGAWA TAKAHIRO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide an easy-to-manufacture solid state image sensor producing homogeneous image data, and to provide a manufacturing method for solid state image sensor.SOLUTION: A solid state image sensor 1 includes a substrate 11, a plurality of photoelectric conversion parts 12 formed in the substrate 11 and generating charges by performing photoelectric conversion of incident light, a first light shielding film 15 formed above the substrate 11 and shielding the light impinging on the photoelectric conversion part, and a second light shielding film 17 formed above the first light shielding film 15 and shielding the light impinging on the photoelectric conversion part 12. Furthermore, the solid state image sensor 1 is provided with a first area 30 through which light enters the photoelectric conversion part 12, a second area 50 which is shielded when the photoelectric conversion part 12 is covered with the second light shielding film 17, and a third area 90 located between the first area 30 and second area 50, and shielded when the photoelectric conversion part 12 is covered with the first light shielding film 15.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140512&amp;DB=EPODOC&amp;CC=JP&amp;NR=2014086552A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140512&amp;DB=EPODOC&amp;CC=JP&amp;NR=2014086552A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AKAGI YUKO</creatorcontrib><creatorcontrib>OGAWA TAKAHIRO</creatorcontrib><title>SOLID STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREFOR</title><description>PROBLEM TO BE SOLVED: To provide an easy-to-manufacture solid state image sensor producing homogeneous image data, and to provide a manufacturing method for solid state image sensor.SOLUTION: A solid state image sensor 1 includes a substrate 11, a plurality of photoelectric conversion parts 12 formed in the substrate 11 and generating charges by performing photoelectric conversion of incident light, a first light shielding film 15 formed above the substrate 11 and shielding the light impinging on the photoelectric conversion part, and a second light shielding film 17 formed above the first light shielding film 15 and shielding the light impinging on the photoelectric conversion part 12. Furthermore, the solid state image sensor 1 is provided with a first area 30 through which light enters the photoelectric conversion part 12, a second area 50 which is shielded when the photoelectric conversion part 12 is covered with the second light shielding film 17, and a third area 90 located between the first area 30 and second area 50, and shielded when the photoelectric conversion part 12 is covered with the first light shielding film 15.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAK9vfxdFEIDnEMcVXw9HV0d1UIdvUL9g9ScPRzUfB19At1c3QOCQ3y9HNX8HUN8fB3UQjxcA1ydfMP4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGJgYWZqamRo7GRCkCAAGFKXc</recordid><startdate>20140512</startdate><enddate>20140512</enddate><creator>AKAGI YUKO</creator><creator>OGAWA TAKAHIRO</creator><scope>EVB</scope></search><sort><creationdate>20140512</creationdate><title>SOLID STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREFOR</title><author>AKAGI YUKO ; OGAWA TAKAHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2014086552A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>AKAGI YUKO</creatorcontrib><creatorcontrib>OGAWA TAKAHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AKAGI YUKO</au><au>OGAWA TAKAHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SOLID STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREFOR</title><date>2014-05-12</date><risdate>2014</risdate><abstract>PROBLEM TO BE SOLVED: To provide an easy-to-manufacture solid state image sensor producing homogeneous image data, and to provide a manufacturing method for solid state image sensor.SOLUTION: A solid state image sensor 1 includes a substrate 11, a plurality of photoelectric conversion parts 12 formed in the substrate 11 and generating charges by performing photoelectric conversion of incident light, a first light shielding film 15 formed above the substrate 11 and shielding the light impinging on the photoelectric conversion part, and a second light shielding film 17 formed above the first light shielding film 15 and shielding the light impinging on the photoelectric conversion part 12. Furthermore, the solid state image sensor 1 is provided with a first area 30 through which light enters the photoelectric conversion part 12, a second area 50 which is shielded when the photoelectric conversion part 12 is covered with the second light shielding film 17, and a third area 90 located between the first area 30 and second area 50, and shielded when the photoelectric conversion part 12 is covered with the first light shielding film 15.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SOLID STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREFOR
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T07%3A13%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=AKAGI%20YUKO&rft.date=2014-05-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2014086552A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true