PLASMA PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus performing stable plasma production in wide-area process conditions and having processing performance excellent in uniformity and reproducibility.SOLUTION: In a plasma processing apparatus including an upper electrode 3 having a gas supp...

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Bibliographische Detailangaben
Hauptverfasser:	ARASE TAKAO, YOKOGAWA KATANOBU, MORI MASASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma processing apparatus performing stable plasma production in wide-area process conditions and having processing performance excellent in uniformity and reproducibility.SOLUTION: In a plasma processing apparatus including an upper electrode 3 having a gas supply hole 6, a gas supply means, and a lower electrode 1, the gas supply means includes a flat member 4 having a gas hole 8 and a flat member 5 having a gas hole 10, the gas supply hole 6 and the gas hole 8 are connected via a groove 7 while the gas hole 8 and the gas hole 10 are connected via a groove 9, and the gas supply hole 6, the gas hole 8 and the gas hole 10 are arranged at positions different mutually in a plane.