FILM DEPOSITION APPARATUS

PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can hold a substrate temperature during film deposition to form a film of desired quality.SOLUTION: The film deposition apparatus is an inline type film deposition apparatus 1 that includes a plurality of film deposition chambers and...

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Bibliographische Detailangaben
Hauptverfasser:	USAMI TATSUMI, TAKAHASHI AKIHISA, MATSUZAKI JUNSUKE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS METALLURGY SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can hold a substrate temperature during film deposition to form a film of desired quality.SOLUTION: The film deposition apparatus is an inline type film deposition apparatus 1 that includes a plurality of film deposition chambers and forms a plurality of layers on a substrate, the apparatus at least including a first heat chamber 12 provided upstream from the plurality of film deposition chambers, and a second heat chamber 15 provided between the plurality of film deposition chambers.