FILM DEPOSITION APPARATUS AND SUBSTRATE HOLDER

PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a substrate holder in which good film deposition processing can be implemented on both surfaces of substrates-under-processing held by the substrate holder.SOLUTION: A substrate holder 11 comprises openings 22 which exposes surfaces of...

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Bibliographische Detailangaben
Hauptverfasser:	WATAI MIWA, OTA ATSUSHI, NAGASAWA SHOJI, MATSUMOTO TAKESHI, HASEGAWA TAKEYUKI, OTOMO MASAHIKO, KATAGIRI HIROAKI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a substrate holder in which good film deposition processing can be implemented on both surfaces of substrates-under-processing held by the substrate holder.SOLUTION: A substrate holder 11 comprises openings 22 which exposes surfaces of substrates-under-processing S at a bottom section of a concavity 21 housing the substrates-under-processing S, and supporting sections 23 which support the substrates-under-processing S by contacting outer peripheral edges of the substrates-under-processing S. Outer surfaces of the supporting sections 23 are constructed so that their tip sides are slant planes 24 slanting towards the substrates-under-processing S. The substrates-under-processing S are carried to a processing section 50 while being held in the substrate holder 11, and film deposition processing on both surfaces of the substrates-under-processing S is implemented.