SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which has heat resistance not to cause remelting even though subjected to a heat treatment a plurality of times in a post-process; and which inhibits voids; and which has a Pb-free die bond connection part.SOLUTION: A semiconductor device compr...

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Bibliographische Detailangaben
Hauptverfasser:	TANAKA NORIHITO, SHIRATORI GO, KIYAMA TOMONORI, KASHIWAGI TOSHINORI
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CASTING CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS MACHINE TOOLS MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS POWDER METALLURGY SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WELDING WORKING BY LASER BEAM WORKING METALLIC POWDER
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device which has heat resistance not to cause remelting even though subjected to a heat treatment a plurality of times in a post-process; and which inhibits voids; and which has a Pb-free die bond connection part.SOLUTION: A semiconductor device comprises: a semiconductor chip; a support substrate; and a die bond connection part for connecting the semiconductor chip and the support substrate. The die bond connection part includes a matrix composed of an Sn element or an Sn-containing low-melting-point metal and high-melting-point metal particles which contain Ni and Sn and which are dispersed in the matrix. And surfaces of the high-melting-point metal particles are coated with an intermetallic compound. A content of an Sn element in the die bond connection part is 75-95 mass%.