SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve product yield of a back side illumination CMOS image sensor.SOLUTION: In a semiconductor device, by forming in a pixel part, dummy wiring DM which is composed of a metal film in the same layer with signal wiring M3, an occupancy of the signal wiring M3 and the dummy...

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Bibliographische Detailangaben
1. Verfasser:	ICHINOSE KAZUHITO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve product yield of a back side illumination CMOS image sensor.SOLUTION: In a semiconductor device, by forming in a pixel part, dummy wiring DM which is composed of a metal film in the same layer with signal wiring M3, an occupancy of the signal wiring M3 and the dummy wiring DM to a region of the pixel part is made equal to an occupancy of the signal wiring M3 to a region of a peripheral circuit part in planar view, and a level difference of a boundary part between the pixel part and the peripheral circuit part on a surface of an insulation film IL4 which covers the signal wiring M3 and the dummy wiring DM is made to be 50 nm or less. In addition, an insulation film having a hardness of 1.0 GPa or more is used for the insulation film IL4 which covers the signal wiring M3 and the dummy wiring DM.