VAPOR DEPOSITION APPARATUS, AND VAPOR DEPOSITION CONTROL METHOD

PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus for forming a thin film on a substrate by moving a vapor deposition source and by measuring with a film thickness sensor thereby to form the thin film on the substrate, wherein the thin film of a stable thickness is formed by controlling...

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Bibliographische Detailangaben
Hauptverfasser: KITANI YUKA, IZAKI MAKOTO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus for forming a thin film on a substrate by moving a vapor deposition source and by measuring with a film thickness sensor thereby to form the thin film on the substrate, wherein the thin film of a stable thickness is formed by controlling the film thickness highly precisely.SOLUTION: A vapor deposition apparatus is fed with a vapor deposition material from a vapor deposition source for forming a thin film on a substrate in a vapor deposition chamber. The apparatus comprises: a control unit; a plurality of film thickness sensors for measuring an evaporation rate by the evaporation source; and an evaporation source driving mechanism for driving the evaporation source reciprocally in parallel with evaporation source. The vapor deposition apparatus further comprises: fixed film thickness sensors disposed at a spacing from each other for measuring the evaporation rates at standby positions when driven by the evaporation source, and fixed at a spacing from each other. The control unit controls the temperature of a heater of the evaporation source, and the moving velocitY of the evaporation source by the evaporation source drive mechanism, with the evaporation rate measured by the thickness sensor and the n-value or the value relating to the ratio of the film thickness formed at each position of the film thickness sensor fixed.