DIE BOND STRUCTURE OF SEMICONDUCTOR ELEMENT AND DIE BONDING METHOD OF SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide a die bond structure unlikely to cause bonding defects for a semiconductor device, especially a power device used in a high-temperature environment, and to provide a die bonding method.SOLUTION: A die bond structure of a semiconductor element, which is formed by bond...

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Bibliographische Detailangaben
Hauptverfasser:	KOGASHIWA TOSHINORI, KURITA MASAAKI, MIYAIRI MASAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a die bond structure unlikely to cause bonding defects for a semiconductor device, especially a power device used in a high-temperature environment, and to provide a die bonding method.SOLUTION: A die bond structure of a semiconductor element, which is formed by bonding of wiring that is composed of copper or copper alloy and formed on a substrate with a semiconductor element by die bonding via a bonding material, comprises: a first barrier layer which is formed between the wiring and the bonding material and on the wiring side and composed of ruthenium; and a second barrier layer which is formed on the first barrier layer and composed of tantalum.