SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can suppress manufacturing cost by reducing a manufacturing time.SOLUTION: A semiconductor device 1 comprises: a P type semiconductor substrate 2; an N type diffusion layer 4 which is formed in the semiconductor substrate 2 and in which an N type first impurity diffuses from a surface 20 of the semiconductor substrate 2 to a predetermined depth d; a P type diffusion layer 6 which is formed in the semiconductor substrate 2 and in which a P type second impurity having a concentration lower than that of the first impurity diffuses from the surface 20 to a depth dshallower than the N type diffusion layer 4 and which is surrounded by the N type diffusion layer 4; and an N+ type diffusion layer 12 which is formed in the P type diffusion layer 6 and in which an N type third impurity having a concentration higher than each of the first impurity and the second impurity diffuses from the surface 20 to a depth dshallower than the depth dof the P type diffusion layer 6.