METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device and a substrate processing device, capable of forming a desired film.SOLUTION: A method for manufacturing a semiconductor device which processes a substrate in a processing chamber comprises the steps of: repeatedly p...

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Bibliographische Detailangaben
Hauptverfasser:	YONEBAYASHI MASAHIRO, YOSHINO AKIHITO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device and a substrate processing device, capable of forming a desired film.SOLUTION: A method for manufacturing a semiconductor device which processes a substrate in a processing chamber comprises the steps of: repeatedly performing a step of supplying a chlorine-containing gas to the substrate and a step of supplying a silicon-containing gas to the substrate supplied with the chlorine-containing gas (first substrate processing step); and supplying a silicon-containing gas to the substrate for which the first substrate processing step was performed (second substrate processing step).